| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1031 |
HIT |
N/a |
2 |
 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
| 2SB1031 |
HITACHI |
N/a |
119 |
|
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
2SB1031K HIT, LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K
2SB1031K Hitach, LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K
2SB1033 UTG, PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB1034 TOSHIBA,Silicon PNP Power Transistors TO-126 package
2SB1035 MIT, SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
2SB1035 Panasonic, SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
2SB1035 , SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
2SB1035 MITSUBISHI, SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
2SB1035-T11-E MITSUBISHI
2SB1031 , SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING
2SB1036 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1054 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SC5606 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5606-T1 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5609 ,Silicon PNP epitaxial planer typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 60 VCBOC ..
