| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1015-Y |
TOSHIBA|TOSHIBA |
N/a |
3700 |
 |
|
| 2SB1015-Y |
FSC|Fairchild Semiconductor |
N/a |
643 |
|
|
| 2SB1015-Y |
SAMSUNG |
N/a |
780 |
|
|
2SB1016A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) g g ypCHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-o ..
2SB1018 , Silicon PNP Power Transistors
2SB1018A ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.2High Collector Current : IC = -7 ALow Collector Saturation Voltage ..
2SB1020A ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONSAPPLICATIONS Unit in mm1010.3¢3.2:0.22.7i0.2High DC Current Gain: hFE =2000 (Min.) (at VCE = -3V, 1 ..
2SB1022 ,Silicon PNP Power Transistors TO-220Fa package
2SC5570 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5577 ,Horizontal Deflection Switching TransistorsFeatures Package Dimensions · High speed (t =100ns typ).f unit:mm · High breakdown voltage (V =1500 ..
2SC5583 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Features• High breakdown voltage, and high reliability through the use of aglass passivation layer( ..
