2SB1011 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.10.5±0.1Collector-base voltag ..
2SB1012 , Silicon PNP Epitaxial
2SB1012 , Silicon PNP Epitaxial
2SB1015 ,Silicon PNP Power Transistors TO-220Fa packageAPPLICATIONS Unit in mmI_1010.3 _1 fb3.2t0.2 2710.20 T.nw Cnnnntnr Qatnrntinn antnc‘n . Vnm 1,...“ ..
2SB1015A ,Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier ApplicationsApplications Unit: mm Low collector saturation voltage: V = −1.7 V (max) CE (sat) (I = −3 A ..
2SB1016A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) g g ypCHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-o ..
2SC5564 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5564 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsFeatures [2SA2011/2SC5564]4.5 · Adoption of MBIT processes.1.51.6 · Large current capacitance. · Lo ..
2SC5565 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5566 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5566-TD-E , Bipolar Transistor
2SC5566-TD-E , Bipolar Transistor
2SB1011
