Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1001BJ |
NEC|NEC |
N/a |
2000 |
|
|
2SB1001BJ |
HITACHI |
N/a |
4200 |
|
|
2SB1002 , Low frequency power amplifier Collector to base voltage VCBO -70 V
2SB1002 , Low frequency power amplifier Collector to base voltage VCBO -70 V
2SB1002 , Low frequency power amplifier Collector to base voltage VCBO -70 V
2SB1002CJTL-E , Silicon PNP Epitaxial
2SB1011 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.10.5±0.1Collector-base voltag ..
2SC5551 ,NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5552 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SC5552 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..