2SA966 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SA968B ,Silicon PNP Power Transistors TO-220 packageFEATURES:. High Transition Frequency; fT=100MHz (Typ.). Complementary to 2SC2238BMAXIMUM RATINGS (T ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-922SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Ampli ..
2SA970 ,Trans GP BJT PNP 120V 0.1A 3-Pin TO-92Applications Unit: mm Low noise : NF = 3dB (typ.) R = 100 Ω, V = −6 V, I = −100 µA, G CE C f ..
2SA970-BL , Low Noise Audio Amplifier Applications
2SA970-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC5440 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5440 ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SC5445 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5453 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5454 ,NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLDPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5454NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI M ..
2SC5455 ,NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLDapplications+0.22.8–0.3+0.2• High gain, low noise1.5 –0.1• Small reverse transfer capacitance• Can ..
2SA966
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SA966
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA966
AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm
5.1 MAX.
0 Complementary to 2SC2236 and SW Output Applications. '
0.75MAX.
MAXIMUM RATINGS (Ta = 25°C) 1.0MAX. - '
0.8MAX. ' ' ' 3 '4 2
CHARACTERISTIC SYMBOL RATING UNIT , E
Collector-Base Voltage VCBO -30 V -
Collector-Emi; Voltage VCEO -30 V 1.27
Emitter-Base Voltage VEBO -5 V " 2 3 x.
Collector Current 1C -1.5 A 2.54 '
Emitter Current IE 1.5 A n." “h i, x-ri:) '
Collector Power Dissipation PC 900 mW r ij-,'-.
Junction Temperature Tj 150 "C l. EMITTER
Storage Temperature Range Tstg -55--150 °C g- EXEE'ECTOR
JEDEC TO-92MOD
JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -30 V, IE = 0 - - -100 nA
Emitter Cut-off Current IEBO VEB = -5V, 1C = 0 - - -100 nA
Collector-Emitter - -
Breakdown Voltage V(BR) CEO IC - -10 mA, IB - 0 -30 - - V
Emitter-Base V I - 1 mA I - 0 -5 - - V
Breakdown Voltage (BR)EBO E - - , C -
= - = - mA -
DC Current Gain (Note) VCE 2V, 1C 500 100 320
Collector-Emitter - -
Saturation Voltage VCE (sat) IC - -1.5A, IB - -0.03A - - -2.0 V
Base-Emitter Voltage VBE VCE = -2V, 10 = -500mA - - -1.0 V
Transition Frequency fT VCE = -2V, 10 = -500mA - 120 - MHz
. VCB= -10V,IE=0,
Collector Output Capacitance Cob f = 1 MHz - 40 - pF
(Note) : hFE Classification C) : 100--200, Y : 160--320
1 2001-10-29
TOSHIBA
IC - VCE
COMMON
- 1400 EMITTER
Ta = 25"C
[C (mA)
COLLECTOR CURRENT
N) A m
0 -2 -4 -6 -8 -10 -12 -14 -16
COLLECTOR-EMITTER VOLTAGE VCE (V)
5 VCE(sat) - IC
COMMON
EMITTER
Icllg = 50
(sat) (V)
Ta = 100°C
VOLTAGE VCE
COLLECTOR-EMITTER SATURATION
-1 -3 -10 -30 -100 -300 -1000 -3000
COLLECTOR CURRENT IC (mA)
COLLECTOR POWER DISSIPATION
PC (W)
0 20 40 60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
2SA966
hFE - IC
= 500 Ta = 100°C
-1 -3 -10 -30 -100 -300 -1000 -3000
COLLECTOR CURRENT IC (mA)
IC - VBE
COMMON
li - 1400 EMITTER
v VCE = -2V
Er-1200
g -1000
g -800
't -600
t Ta = 100°C
g -400
O -200
o _0.2 _0.4 -0.6 -0.8 -1.0 -1.2 _1.4 -1.6 -1.8
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-5 I I I I III I
IC MAX.(PULSED)y.4 - 100 msx 10 n,""'
-3 I I I I III , ,
_10 MAX. "s,( 4 \ Imsht. -
(CONTINUOUS)
's 'N,
< -1 's, l
V N . , 's A
S? N Isyd. 1shh
_ N \\
F 0.5 "N. Nh
2 -DC OPERATION N ,
g; -0.3 Ta=25''C \
ttt 's.
O N, s,
o -0.1
B .)rd. SINGLE N
8 -0.05 NONREPETITIVE "N
PULSE Ta = 25°C ‘
-0.03 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO M AX.
-0.01 -- ,
-0.3 -1 -3 -10 -30
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA966
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
:
www.loq.com
.
