2SA2183 ,Power transistor for high-speed switching applicationsAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage ..
2SA2184 ,Power transistor for high-speed switching applicationsElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
2SA2214 ,Transistor for low frequency small-signal amplificationAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V−20 ..
2SA2214 ,Transistor for low frequency small-signal amplificationElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
2SA473 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SA473 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SC5103 TLQ , High speed switching transistor (60V, 5A)
2SC5103TLQ , High speed switching transistor (60V, 5A)
2SC5103TLQ , High speed switching transistor (60V, 5A)
2SC5103TLQ , High speed switching transistor (60V, 5A)
2SA2183
Power transistor for high-speed switching applications
2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183 High Current Switching Applications Low collector-emitter saturation : VCE(sat) = −1.0 V（max）
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
Weight: 1.7 g (typ.)
