2SA2097 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications Unit: mmDC-DC Converter
2SA2113 , Medium power transistor (-30V, -2A)
2SA2118 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.8±0.1 0.55±0.15Parameter Symbol Rating UnitCollector-base volt ..
2SA2118 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA2119K , Low frequency transistor
2SA2140 ,Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220D-A1Electrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC5081 , Silicon NPN Epitaxial
2SC5081 , Silicon NPN Epitaxial
2SC5084 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC5086 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC5086FT-Y , VHF~UHF Band Low Noise Amplifier Applications
2SC5088 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SA2097
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications
2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097 High-Speed Swtching Applications
DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = −0.5 A) Low collector-emitter saturation: VCE (sat) = −0.27 V (max) High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
