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2SA2056TOSHIBAN/a2624avaiTransistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications


2SA2056 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.5 A) FE C Low collector-emitter sa ..
2SA2057 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2058 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.2 A) FE C Low collector-emitter sa ..
2SA2059 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.5 A) FE C Low collector-emitter sa ..
2SA2060 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.5 A) FE C Low collector-emitter sa ..
2SA2061 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = 0.5 A) FE C Low collector-emitter sat ..
2SC5047 ,Ultrahigh-Definition CRT Display Horizontal Deflection Output ApplicationsFeatures. High speed (tr=100nstyp).. High reliability (Adoption ofHVP process).. High breakdown vol ..
2SC5047 ,Ultrahigh-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1600 VColleeeor-to-Emitter ..
2SC5048 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "eftf't wr O . O 9 L0 -lnlgn voltage : ..
2SC5049 , Silicon NPN Epitaxial
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2SC505 , High Voltage Transistors


2SA2056
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2056

High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications High DC current gain: hFE = 200 to 500 (IC = −0.5 A) Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) High-speed switching: tf = 90 ns (typ.)
Maximum Ratings (Ta = 25°C)

Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
Electrical Characteristics (Ta = 25°C)

Unit: mm
Weight: 0.01 g (typ.)
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