Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1989-T111-1R/TR |
MITSUSHI |
N/a |
3000 |
|
|
2SA1993 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1993 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA2002 , FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
2SA2004 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2005 , For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)
2SC5004 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
2SC5004-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDFEATURES• High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)3• Low Cre : 0.9 pF TYP. (@ VCB ..
2SC5004-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDES ..