| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1973-6 |
SANYO |
N/a |
3000 |
 |
|
| 2SA1973-6 |
SANYO|SANYO |
N/a |
1000 |
|
|
2SA1977 ,PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIERDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1977PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SA1978 ,PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIERDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SA1978 ,PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIERDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SA1978-T1B ,fT=4GHz PNP Bip TrDATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICR ..
2SA1979S , PNP Silicon Transistor (Medium power amplifier)
2SC4958-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SC4959 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SC4959-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
