| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1955FV-A |
TOSHIBA|TOSHIBA |
N/a |
16000 |
 |
|
| 2SA1955FV-A |
TOSHIBA |
N/a |
8000 |
|
|
2SA1962 ,PNP Epitaxial Silicon Transistorapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1962 ,PNP Epitaxial Silicon TransistorFeatures• High Current Capability: I = -17ACTO-3P• High Power Dissipation : 130watts 1• High Freque ..
2SA1962-O , Power Amplifier Applications
2SA1962OTU , PNP Epitaxial Silicon Transistor
2SA1962RTU , PNP Epitaxial Silicon Transistor
2SC4935 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4942 ,High-speed high-voltage switching NPN 3-diffusion transFEATURES• New package with dimensions in between those of smallsignal and power signal package Hig ..
2SC4944 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I ..
