Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1931(Q,T) |
TOSHIBA|TOSHIBA |
N/a |
443 |
|
|
2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.2$1,?High Transition Frequency : fT=70MHz (Typ.)Complementary to 2805174L4 : 0.4MA ..
2SA1932 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS2SA1932TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPEZSA1932POWER AMPLIFIER
2SA1932. ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmDRIVER STAGE AMPLIFIER
2SA1937 ,Transistor Silicon PNP Triple Diffused Type High Voltage Switching Applications2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching
2SA1937 ,Transistor Silicon PNP Triple Diffused Type High Voltage Switching ApplicationsApplications Unit: mm High voltage: V = −600 V CEO Maximum Ratings (Ta = 25°C)Characteristic ..
2SC4891 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectopto-Emitter ..
2SC4892 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.35±0.11.05±0.1Parameter Symbol Rating Unit0.55±0.10.55±0.1Coll ..
2SC4899 , Silicon NPN Epitaxial