Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1740F-TD |
TOSHIBA|TOSHIBA |
N/a |
175 |
|
|
2SA1741 ,Silicon powor transistorfeatures a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converte ..
2SA1741. ,Silicon powor transistorDATA SHEETSILICON POWER TRANSISTOR2SA1741PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1742 ,Silicon powor transistorfeatures a high hFE at low VCE(sat). This transistor is idealPart No. Packagefor use as a driver i ..
2SA1743 ,Silicon powor transistorFEATURES• High hFE and low VCE(sat):hFE ≥ 100 (VCE = −2 V, IC = −2 A)V CE(sat) ≤ 0.3 V (IC = −6 A, ..
2SA1744 ,Silicon powor transistorfeatures a high hFE at Low VCE(sat). This transistor isideal for use as a driver in DC/DC converte ..
2SC4636 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCo1leetor-trr.Base Voltage V0130 2000 VColleetor-toamitter ..
2SC4636.. ,High-Voltage Amp, High-Voltage Switching ApplicationsOrdering number: EN 3705ANo.3705A2SC4636NPN Triple Diffused Planar Silicon TransistorHigh-Voltage A ..
2SC4636LS ,NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..