| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1736(TE12R,F) |
TOSHIBA|TOSHIBA |
N/a |
981 |
 |
|
2SA1737 ,For video amplifierElectrical Characteristics (Ta=25˚C)nParameter Symbol Conditions min typ max UnitCollector cutoff ..
2SA1738 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA1739 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA1740 ,PNP Epitaxial Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1741 ,Silicon powor transistorfeatures a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converte ..
2SC4632 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Basg Voltage VCBO 1500 VCollector-to-Emitter ..
2SC4632LS ,NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching ApplicationsFeatures Package Dimensions•High breakdown voltage(V min=1200V).CEO unit : mm•Small Cob(typical Cob ..
2SC4633 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectur-to-Emitter ..
