| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1603A-T11-1S |
MITSUBISHI |
N/a |
13590 |
 |
|
2SA1606 ,PNP Epitaxial Planar Silicon Transistors PNP/NPN Epitaxial Planar Silicon TransistorsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1607 ,PNP Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1608 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
VCBO -60
VCEO -40
VEBO --5.0
..
2SA1608-T1 ,Silicon transistorFEATURES
0 High fT : fT=400 MHz
0 Complementary to 2SC3739
ABSOLUTE MAXIMUM RATINGS
SILIC ..
2SA1608-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
VCBO -60
VCEO -40
VEBO --5.0
..
2SC4452 ,NPN Epitaxial Planar Silicon Transistor High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4458 ,NPN Triple Diffused Planar Silicon Transistor 500V/7A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4459 ,Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCollector-to-Base Voltage V030 800 VCollectortoEmitter Volt ..
