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2SA1587TOSHIBAN/a3000avaiTransistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications


2SA1587 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm  High voltage: V = −120 V CEO Excellent h linearity: h (I = −0.1 mA)/h ..
2SA1587-GR , Audio Frequency General Purpose Amplifier Applications
2SA1588 ,Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching ApplicationsApplications  Excellent h linearity : h = 25 (min) FE FE (2) at V = −6 V, I = −400 mA CE C ..
2SA1593 ,PNP Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1598 , Switching Power Transistor(-7A PNP)
2SA1598 , Switching Power Transistor(-7A PNP)
2SC4407 ,NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator ApplicationsFeatures0.15 · High cutoff frequency : f =3.0GHz typT3 · High power gain : PG=12dB typ (f=0.9GHz)0~ ..
2SC4408 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNI ..
2SC4409 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power switching applicationsApplications Unit: mmPower switching
2SC4410 ,Small-signal deviceElectrical Characteristics (Ta=25˚C)

2SA1587
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1587

Audio Frequency General Purpose Amplifier Applications High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package
Maximum Ratings (Ta �
�� � 25°C)
Electrical Characteristics (Ta �
�� � 25°C)
Note: hFE classification GR (G): 200~400, BL (L): 350~700 ( ) marking symbol
Marking

Unit: mm
Weight: 0.006 g (typ.)
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