| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1461-T1B/Y23/Y22 |
NEC|NEC |
N/a |
21000 |
 |
|
2SA1461-T2B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 2
CHARACTERISTIC SYMBOL
Collector Cutoff Current ICBO.
Emit ..
2SA1462 ,HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL _ . . . TEST CONDITIONS
(q Collec ..
2SA1462-T1B ,HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
E
E 0 High Speed Switching : ton =9.0 ns TYP.
+0.1 E . I toff=19.0 ns TYP.
E .. . . ..
2SA1462-T2B ,Silicon transistor_ HIGH SPEED SWITCHING
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
NEC V f - t-----_- W m SILIE ..
2SA1462-T2B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL _ . . . TEST CONDITIONS
(q Collec ..
2SC4186 ,UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SC4187 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristic Symbol MIN. TYP. MAX. Unit Test ConditionsCol ..
2SC4187-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristic Symbol MIN. TYP. MAX. Unit Test ConditionsCol ..
