| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1451A-Y |
TOSHIBA|TOSHIBA |
N/a |
1389 |
 |
|
| 2SA1451A-Y |
TOS|TOSHIBA |
N/a |
473 |
|
|
2SA1452 ,Silicon PNP Power Transistors TO-220Fa packageAPPLICATIONSUnit in mm11wr 1:LOW uouector 25aturat10n v Oltage 10 1 0.3 f3.2 , 0.2 2.Tt 0.2l" -1.Tr ..
2SA1452A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching ApplicationsAPPLICATIONS Unit in mmLow Collector Saturation Voltaire1010.3¢3.2:0.22.7i0.2: VCE (sat): -0.4V (Ma ..
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1461 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDtttEC
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ELECTRON DEVICE //////
SILICONfWTEANVSISToRM
'.ti/N1llltllf'F'1
HIGH FREQUENC ..
2SC4181A-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta LT.. 25 °C)
CHARACTERISTIC ' SYMBOL _Tritrll'T'Pr"
Collector Cut ..
2SC4181-T1 ,Silicon transistorFEATURES
in milgTitgr: E q High DC Current Gain : hFE = 1 000 to 3 200
1.25+0.1 . Low VCE(sat) :V ..
2SC4181-T2 ,Silicon transistorDATA SHEET . l
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NEC . E . . SILICON TRANSISTORS
-er'l''o' BliiViCE 2 $6418 'll ..
