| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1416T-TC |
SONYO |
N/a |
2999 |
 |
|
2SA1425 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1431 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1434 ,PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1435 ,PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1435 ,PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier ApplicationsFeatures 5.04.04.0 · Adoption of MBIT process. · High DC current gain (h =500 to 1200).FE · Large c ..
2SC4176 ,HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °c)
CHARACTERISTIC f svMBoC" MIN. TYP. --T- MAX. UNIT TEST CONDI ..
2SC4176-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 °c)
CHARACTERISTIC f svMBoC" MIN. TYP. --T- MAX. UNIT TEST CONDI ..
2SC4176-T2 ,Silicon transistorPACKAGE DIMENSIONS
in millimeters
2.1i0.1
v
0.9i0.1
0.3
1. Emitter
2. Base
B. Colle ..
