| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1411 |
NEC |
N/a |
3000 |
 |
Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V |
| 2SA1411 |
NEC|NEC |
N/a |
17000 |
|
Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V |
2SA1411-T1B NEC
2SA1411-T2B NEC
2SA1411-T2B/M15 NEC
2SA1411 , Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V
2SA1412 ,Silicon transistorapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Collector to Base Voltage Vceo -400 V
Co ..
2SA1412-Z ,PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Collector to Base Voltage Vceo -400 V
Co ..
2SA1413 ,PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Collector to Base Vohage Vcao -60t) V
Co ..
2SA1415 ,PNP Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4163 ,NPN Triple Diffused Planar Type Silicon Transistor Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCollector-to-Base Voltage VCBO 500 VCollector-to-En- Voltag ..
2SC4166 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC4167 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
