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2SA1385ToshibaN/a1800avaiPNP SILICON EPITAXIAL TRANSISTOR MP-3
2SA1385-Z |2SA1385ZNECN/a876avaiPNP SILICON EPITAXIAL TRANSISTOR MP-3


2SA1385 ,PNP SILICON EPITAXIAL TRANSISTOR MP-3FEATURES . . Low VCE(sat) : VCE(sat) = -0.18 V TYP. . Complement to 2SC3518-Z QUALITY GRADE ..
2SA1385-Z ,PNP SILICON EPITAXIAL TRANSISTOR MP-3ELECTRICAL CHARACTERISTICS (Ta = 25 °C) VEB = -7.0 V, lc = 0 Vcs = --1.0 V, lc = -5.0 A " " = ..
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2SC4152 ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.54±0.3Parameter Symbol Rating Unit5.08±0.5Collector-base volta ..
2SC4152 ,Power DeviceFeatures• High-speed switchingφ 3.1±0.1• High collector-base voltage (Emitter open) VCBO• Wide safe ..
2SC4154 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE


2SA1385-2SA1385-Z

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