| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1363-T111-1E |
MITSUBISHI |
N/a |
904 |
 |
|
| 2SA1363-T111-1E |
|
N/a |
904 |
|
|
| 2SA1363-T111-1E |
MITSUBIS |
N/a |
904 |
|
|
2SA1365 , Low collector to emitter saturation voltage. High collector current.
2SA1366 , FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1369 , High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW
2SA1369 , High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW
2SA1369 , High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW
2SC4110 ,NPN Bipolar Transistor for Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4111 ,Silicon NPN triple diffusion planar typeAbsolute Maximum Ratings (T =25˚C)nC3.0– 0.3 2.7– 0.3–Parameter Symbol Ratings Unit1.0– 0.20.6– 0. ..
2SC4112 , Switching Applications(with Bias Resistance)
