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2SA1356TOSN/a5avaiTRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATION


2SA1356 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT Collector Cut-of ..
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2SC4107 ,NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4108 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsFeatures Package Dimensions · High breakdown voltage and high reliability.unit:mm · Fast switching ..


2SA1356
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATION
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1356
AUDIO POWER AMPLIFIER APPLICATIONS
2SA1356
Unit in mm
.5.8 . ' 3.1:o.1
0 Low Saturation Voltage 3% 'f',r,Q-i'; V?
: VcE(sat)=-0.32v(Typ.)(1c=-500mA, IB---50mA) Df?f(c, "f tt,z''s," j]
0 High Collector Power Dissipation : P0=1.2W(Ta=25°C) ii 5
0 Complementary to 2SC3419
MAXIMUM RATINGS (Tc = 25°C) 0.75t0.15
14.0MIN.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V 2310.1 2.3201
Colleetor-Emitter Voltage VCEO -40 V 1 2 3 -- u? if
Emitter-Base Voltage VEBO -5 V :1 _u' “w m tia _:_[§
Collector Current IC -800 mA E l. EMITTER
Base Current 1B -80 mA Ct 2. COLLECTOR
3. BASE
Collector Power Ta=25°C P 1.2 W
Dissipation Te = 25°C C 5 JEDEC -
J unction Temperature Tj 150 "C JEITA -
T HIBA 2- HlA
Storage Temperature Range Tstg -55--150 °C OS 8
Weight 2 0.82g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -40V, IE = 0 - - - 1.0 ph
Emitter Cut-off Current IEBO VEB = - 5V, 1C = 0 - - - 1.0 pA
Collector-Emi; -
Breakdown Voltage VCEO IC - - lOmA, IB - 0 - 40 - - V
hFE(1)
V = -2V, I = -50mA 70 - 240
DC Current Gain (Note) CE C
hFE(2) VCE = - 2V, IC = - 800mA 13 50 -
Collector-Emi;
Saturation Vol tage VCE(sat) 1C - - 500mA, IB - - 50mA - - 0.32 - 0.8 V
Base-Emitter Voltage VBE VCE = - 2V, 10 = - 500mA - - - 1.3 V
Transition Frequency fT VCE = - 2V, IC = - 0.5A 50 100 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 20 - pF
(Note) : hFE(1) Classification 0 :
70--140, Y : 120--240
2001 -1 0-29
TOSHIBA
2SA1356
IC - VCE
- 1000
COMMON
2 EMITTER
E Tc = 25''C
- - 800
a - 600
pd - 400
.1 - 200
0 - 1 - 2 - 3 - 4 - 5 - 6
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON
EMITTER
Ic / IB = 10
VCE.<'= é» s':
D-l 9.0 (II
Tc= 100°C
VOLTAGE
COLLECTOR-EMITTER SATURATION
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT 10 (mA)
C) Tc=Ta
INFINITE HEAT SINK
C)? NO HEAT SINK
COLLECTOR POWER DISSIPATION
PC (W)
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
hFE - IC
COMMON
EMITTER
VCE = - 2V
Tc = 100°C
-3 -10 -30 -100 -300 -1000
V -800
COLLECTOR CURRENT
COLLECTOR CURRENT IC (mA)
1C - VBE
COMMON
EMITTER
VCE = _ 2v
Tc= 100°C 25
0 -0.2 -0.4 -0.6 -0.8 - 1.0 - 1.2
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-3000 I IIIIII I I Ims8
-IC MAX.(PULSED))k. " l'. -
A // 10msy.C.
<3 I llllll l l 'N 100rnsyf
5-10003“; MAX.(CONTINUOUS) "s, F . -
0 lllllll N] '?,
'-" _I I I I III Sh
E -500 _DC OPERATION . NY
M 300- Ta=25''C \ \\
pt - h
ttt III I \ l
D DC OPERATION
o Tc=25°C Ns "N
n: x \
f? -100 III I I I I N.
o X SINGLE NONREPETITIVE "s
'5 PULSE Tc=25°C
g -50 CURVES MUST BE
Cir DERATED LINEARLY
WITH INCREASE IN
-20 TEMPERATURE. YCEO PT
-0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA ZSA1356
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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