| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1329-O |
TOS|TOSHIBA |
N/a |
141 |
 |
|
2SA1330 ,HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T1B ,Silicon transistorFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T2B ,Silicon transistorNEC ////
ELECTRON DEVICE /
-,-tlb,,----, ---,---,--,,-,-,---,------),
sii,iiiiiiiii TRANSI ..
2SA1331 ,High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1331 ,High-Speed Switching ApplicationsFeatures Package Dimensions · Fast switching speed.unit:mm · High breakdown voltage.2018A · Small-s ..
2SC4093 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4093-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4094 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
