2SA1312 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier ApplicationsApplications Unit: mm High voltage: V = −120 V CEO Excellent h linearity: h (I = −0.1 mA)/ h ..
2SA1312-BL , Audio Frequency Low Noise Amplifier Applications
2SA1312-BL , Audio Frequency Low Noise Amplifier Applications
2SA1313 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low ..
2SA1313 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching ApplicationsApplications Excellent h linearity : h = 25 (min) FE FE (2) at V = −6 V, I = −400 mA CE C ..
2SA1313-Y , Audio Frequency Low Power Amplifier Applications
2SC4081 T106R , General purpose transistor (50V, 0.15A)
2SC4081 T106R , General purpose transistor (50V, 0.15A)
2SC4081 T106 R , General purpose transistor (50V, 0.15A)
2SC4081 T106R , General purpose transistor (50V, 0.15A)
2SC4081 T106S , General purpose transistor (50V, 0.15A)
2SC4081RT1 ,General Purpose Amplifier TransistorMaximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation ..
2SA1312
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1312 Audio Frequency Low Noise Amplifier Applications High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) h= 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Small package
Maximum Ratings (Ta ��� � 25°C)
Marking Unit: mm
Weight: 0.012 g (typ.)
