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2SA1244东芝N/a3790avaiTransistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications
2SA1244TOSHIBAN/a5100avaiTransistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications


2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm  Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm  Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1245 ,Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier ApplicationsApplications Maximum Ratings (Ta  25°C)Characteristics Symbol Rating Unit Collector-base vo ..
2SA1246 ,High-VEBO, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1248 ,160V/700mA Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1252 ,High VEBO, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3942 ,Power DeviceFeatures• High collector-emitter voltage (Base open) VCEOφ 3.1±0.1• Small collector output capacita ..
2SC3942 ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SC3942 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2.54±0.3Collector-base voltage (Emit ..
2SC3942. ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3943 ,Power DeviceFeatures• High transition frequency fTφ 3.1±0.1• Small collector output capacitance (Common base, i ..
2SC3944A.. ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SC3944 V I ..


2SA1244
Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications
2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244

High Current Switching Applications Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) High speed switching time: tstg = 1.0 µs (typ.) Complementary to 2SC3074
Maximum Ratings (Ta = 25°C)

Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
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