2SA1242 ,Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications Unit: mmMedium Power Amplifier
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1245 ,Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier ApplicationsApplications Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Collector-base vo ..
2SA1246 ,High-VEBO, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1248 ,160V/700mA Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3940 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.152SC3940 V 30 V +0.2 0.45Collect ..
2SC3941 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.15+0.2 0.45Parameter Symbol Rating Unit –0.10.45–0.1(1.27) (1 ..
2SC3941 ,Small-signal deviceTransistors2SC3941Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplif ..
2SC3942 ,Power DeviceFeatures• High collector-emitter voltage (Base open) VCEOφ 3.1±0.1• Small collector output capacita ..
2SC3942 ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SC3942 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2.54±0.3Collector-base voltage (Emit ..
2SA1242
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1242 Strobe Flash Applications
Medium Power Amplifier Applications Excellent hFE linearity
: hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
: hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) Low collector saturation voltage
: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Maximum Ratings (Ta = 25°C) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
