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2SA1241-Y/3F TOSHIBM|TOSHIBA N/a 600



2SA1242 ,Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications Unit: mmMedium Power Amplifier
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm  Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm  Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1245 ,Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier ApplicationsApplications Maximum Ratings (Ta  25°C)Characteristics Symbol Rating Unit Collector-base vo ..
2SA1246 ,High-VEBO, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3940 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.152SC3940 V 30 V +0.2 0.45Collect ..
2SC3941 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.15+0.2 0.45Parameter Symbol Rating Unit –0.10.45–0.1(1.27) (1 ..
2SC3941 ,Small-signal deviceTransistors2SC3941Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplif ..
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