| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1160B |
TOSHIBA|TOSHIBA |
N/a |
150 |
 |
|
2SA1162 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-O , PNP Silicon Plastic-Encapsulate Transistor
2SC3829 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC383 ,NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
2SC3831 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
