| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1153-T |
NEC|NEC |
N/a |
2500 |
 |
|
2SA1156 ,PNP SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
hFE **
ton
-tstg
tf _
VCEO(SUS)
VCEX(SU ..
2SA1162 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC3810 ,NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 ° ° °C)° °PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITC ..
2SC3811 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3820 ,High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25''C unitCollector to Base Voltage Haro 60 VCollector to Emitter ..
