Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1030C |
RENESAS |
N/a |
3700 |
|
|
2SA1030C |
HITACHI |
N/a |
450 |
|
|
2SA1034 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating Unit2SA1034 V −35 VCollector-base vol ..
2SA1035 ,Small-signal deviceFeatures• Low noise voltage NV• High forward current transfer ratio hFE 1 2• Mini type package, all ..
2SA1035 ,Small-signal deviceTransistors2SA1034, 2SA1035Silicon PNP epitaxial planar typeUnit: mmFor low-frequency and low-noise ..
2SA1036K T146 , Medium Power Transistor
2SA1036K T146P , Medium Power Transistor
2SC3657 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.2SC36577QC26E7SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm' _ U”UMAXIMUM RATINGS (Tc = ..
2SC3661 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3663 ,NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3663NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUE ..