| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1020Y |
|
N/a |
50 |
 |
|
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1022 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SA1034 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating Unit2SA1034 V −35 VCollector-base vol ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
