| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1020-Y |
|
N/a |
600 |
 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| 2SA1020-Y |
TOSHIBA|TOSHIBA |
N/a |
6000 |
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| 2SA1020-Y |
TOS|TOSHIBA |
N/a |
5070 |
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
2SA1020-Y(F，M) TOSHIBA
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1022 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SA1034 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating Unit2SA1034 V −35 VCollector-base vol ..
2SA1035 ,Small-signal deviceFeatures• Low noise voltage NV• High forward current transfer ratio hFE 1 2• Mini type package, all ..
2SA1035 ,Small-signal deviceTransistors2SA1034, 2SA1035Silicon PNP epitaxial planar typeUnit: mmFor low-frequency and low-noise ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
