2SA1009A ,PNP SILICON POWER TRANSISTORSFEATURES
The 2SA1009, 2SA1009A are PNP triple diffused transistors de..
signed for switching re ..
2SA101 , Ge PNP Drift
2SA1010 ,SILICON POWER TRANSISTORDATA SHEETSILICON POWER TRANSISTOR2SA1010PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HI ..
2SA1010 ,SILICON POWER TRANSISTORDATA SHEETSILICON POWER TRANSISTOR2SA1010PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HI ..
2SA1011 ,POWER TRANSISTORS(1.5A,160V,25W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1012 ,TO-220 Plastic-Encapsulate Biploar TransistorsAPPLICATIONSUnit in mm. . $55.61 0.2
Low Collector Saturation Voltage 10 ?MA 1/: VCE(sat) = -0.4V ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SC3617-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SC3618 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDoftslllEiiiiiC:
DATA SHEET
SILICON TRANSISTOR
2SC361 tit
NPN SILICON EPITAXIAL TRANSIST ..
2SC3618-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25°C)
"''Pulsed: PW g 350 us, Duty Cycle l; 2 %
hFE Classifi ..
2SC3618-T2 ,Silicon transistoroftslllEiiiiiC:
DATA SHEET
SILICON TRANSISTOR
2SC361 tit
NPN SILICON EPITAXIAL TRANSIST ..
2SC3619 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS0 High Voltage : VCEQ=3UUV0 Small Collector Output Capacitance : Cob=3.0pF (Typ.)MAXIMU ..
2SA1009-2SA1009A
