| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2S94M-5.0 |
NSC|National Semiconductor |
N/a |
60 |
 |
|
2SA1006 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
..
2SA1009A ,PNP SILICON POWER TRANSISTORSFEATURES
The 2SA1009, 2SA1009A are PNP triple diffused transistors de..
signed for switching re ..
2SC3615 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERlSTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SC3616 ,NPN SILICON TRANSISTORapplications
requiring High DC Current Gain.
This is suitable for all kind of driving, instead ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
