Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2S0880#T |
|
N/a |
19 |
|
|
2SA1006 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
..
2SA1009A ,PNP SILICON POWER TRANSISTORSFEATURES
The 2SA1009, 2SA1009A are PNP triple diffused transistors de..
signed for switching re ..
2SC3601 ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3601 ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output ApplicationsFeatures · High f : f typ=400MHz.T T · High breakdown voltage : V ‡ 200V.CEO · Small reverse transf ..
2SC3606 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..