| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2RT0264B |
NEC|NEC |
N/a |
31 |
 |
|
2SA1006 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
..
2SA1009A ,PNP SILICON POWER TRANSISTORSFEATURES
The 2SA1009, 2SA1009A are PNP triple diffused transistors de..
signed for switching re ..
2SC3588-Z ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3ELECTRICAL CHARACTERISTICS (Ta IT, 25 °C)
T _CHARACrERlSTlt? ' ' SYMBOL,
Collector Cutoff Cur ..
2SC3591 ,High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25°CunitCollector-to-Base Voltage VCBO 400 VCollector-to-Ernie- Vol ..
2SC3596 ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
