2RI60E-080 ,POWER DIODE MODULEFUJ I
[7iz,0EIirE20 I1:1I"It)"I['1.01POWER DIODE MODULE N I Outline Drawings
. All the terminal ..
2SA1006 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
..
2SA1009A ,PNP SILICON POWER TRANSISTORSFEATURES
The 2SA1009, 2SA1009A are PNP triple diffused transistors de..
signed for switching re ..
2SC3585-T2B ,For amplify microwave and low noise.features excellent power gain with very low-noise figures. The2.8±0.22SC3585 employs direct nitrid ..
2SC3585-T2B ,For amplify microwave and low noise.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3588 ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3applications.
. Base .
. Collector
. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta IT, 25 °C) , Coll ..
2SC3588.. ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3FEATURES
q High Voltage Vcso = 400 V
. 0 Complement to 2SA1400-Z
QUALITY GRADE
Standard
..
2SC3588-Z ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3ELECTRICAL CHARACTERISTICS (Ta IT, 25 °C)
T _CHARACrERlSTlt? ' ' SYMBOL,
Collector Cutoff Cur ..
2SC3591 ,High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25°CunitCollector-to-Base Voltage VCBO 400 VCollector-to-Ernie- Vol ..
2RI60E-080
