| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2R5TSL470M8 |
|
N/a |
2800 |
 |
|
| 2R5TSL470M8 |
SANYO|SANYO |
N/a |
2800 |
|
|
2RI60E-080 ,POWER DIODE MODULEFUJ I
[7iz,0EIirE20 I1:1I"It)"I['1.01POWER DIODE MODULE N I Outline Drawings
. All the terminal ..
2SA1006 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
..
2SC3583-T2B ,For amplify microwave and low noise.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3583MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3585 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISORfeatures excellent power gain with very low-noise figures. The2.8±0.22SC3585 employs direct nitrid ..
2SC3585T1B ,For amplify microwave and low noise.features excellent power gain with very low-noise figures. The2.8±0.22SC3585 employs direct nitrid ..
