| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2R5TPE470MC |
|
N/a |
2750 |
 |
|
| 2R5TPE470MC |
SANYO|SANYO |
N/a |
620 |
|
|
2RI60E-080 ,POWER DIODE MODULEFUJ I
[7iz,0EIirE20 I1:1I"It)"I['1.01POWER DIODE MODULE N I Outline Drawings
. All the terminal ..
2SA1006 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
..
2SC3583 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3583MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3583-T1B ,For amplify microwave and low noise.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3583MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3583-T2B ,For amplify microwave and low noise.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3583MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
