| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2R5TPC56M |
|
N/a |
1800 |
 |
|
| 2R5TPC56M |
SANYO|SANYO |
N/a |
1800 |
|
|
2RI60E-080 ,POWER DIODE MODULEFUJ I
[7iz,0EIirE20 I1:1I"It)"I['1.01POWER DIODE MODULE N I Outline Drawings
. All the terminal ..
2SA1006 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
m E
o“
2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
..
2SC3526(H) ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3527 ,Silicon PNP Triple-Diffused Planar TypePoWer Transistors -. T _ , "'-r_' /,;25C3527Silicon PNP Triple- Diffused Planar TypeHigh Breakdown ..
2SC3528 ,Power TransistorAbsolUte Maximum Ratings (TC=25°C) 22max. |Item Symbol Value Unit E 2.0:“ I——-———-——v—-—————————-—— ..
