| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2PD602L WR |
XX |
N/a |
3000 |
 |
|
2PG001 ,N-channel enhancement mode IGBTElectrical Characteristics T = 25°C±3°CCParameter Symbol Conditions Min Typ Max UnitCollector-emit ..
2PG006 ,Silicon N-channel enhancement IGBTAbsolute Maximum Ratings T = 25°CC 1. GateParameter Symbol Rating Unit 2. CollectorCollector-emitt ..
2PG009 ,Silicon N-channel enhancement IGBTAbsolute Maximum Ratings T = 25°CC Pin NameParameter Symbol Rating Unit 1. Gate 2. CollectorColl ..
2R5TPB1000M , standard products corresponding to the diversification of the needs
2R5TPB1000M , standard products corresponding to the diversification of the needs
2SC3481 ,NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR
2SC3496A ,Power DeviceFeatures• High-speed switching• High collector-base voltage (Emitter open) VCBO0 to 0.4• Satisfacto ..
2SC3502. ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display, Video Output Applications
