2PB709ARL ,45 V, 100 mA PNP general-purpose transistorsApplicationsn General-purpose switching and amplification1.4 Quick reference dataTable 2. Quick refe ..
2PB709ART ,45 V, 100 mA PNP general-purpose transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
2PB709ARW ,PNP general purpose transistors
2PB709ASL ,45 V, 100 mA PNP general-purpose transistorsLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
2PB709ASW ,PNP general purpose transistorsAPPLICATIONS3 collector• General purpose switching and amplification.DESCRIPTION3handbook, halfpage ..
2PB710AR ,PNP general purpose transistor
2SC3417 ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output ApplicationsOrdering number:EN1390DPNP/NPN Epitaxial Planar Silicon Transistors2SA1353/2SC3417Ultrahigh-Definit ..
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2SC3419 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS).75.8gi3.1 10.1hFE = 70 (Min.) (VCE = 2V, IC = 4A)Low Saturation Voltage: VCE (sat) = ..
2SC3421 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2PB709ARL-2PB709ASL
45 V, 100 mA PNP general-purpose transistors
Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
[1] /DG: halogen-free
1.2 Features General-purpose transistors Two current gain selections AEC-Q101 qualified Small SMD plastic package
1.3 Applications General-purpose switching and amplification
1.4 Quick reference data
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
Rev. 01 — 12 November 2008 Product data sheet
Table 1. Product overview2PB709ARL SOT23 TO-236AB 2PD601ARL
2PB709ASL 2PD601ASL
2PB709ARL/DG SOT23 TO-236AB 2PD601ARL/DG
2PB709ASL/DG 2PD601ASL/DG
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - −45 V collector current - - −100 mA
hFE DC current gain VCE= −10V;= −2mA
hFE groupR 210 - 340
hFE groupS 290 - 460
NXP Semiconductors 2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors Pinning information Ordering information[1] /DG: halogen-free
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning base emitter collector
sym013
Table 4. Ordering information2PB709ARL - plastic surface-mounted package; 3 leads SOT23
2PB709ASL
2PB709ARL/DG
2PB709ASL/DG
Table 5. Marking codes2PB709ARL SN*
2PB709ASL SL*
2PB709ARL/DG SS*
2PB709ASL/DG SZ*
NXP Semiconductors 2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Characteristics
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −45 V
VCEO collector-emitter voltage open base - −45 V
VEBO emitter-base voltage open collector - −6V collector current - −100 mA
ICM peak collector current single pulse;≤ 1ms −200 mA
IBM peak base current single pulse;≤ 1ms −100 mA
Ptot total power dissipation Tamb≤25°C [1]- 250 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from junction
to ambient
in free air [1]- - 500 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −45 V; IE =0A - - −10 nA
VCB= −45 V; IE =0A;= 150°C −5 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −10 nA
hFE DC current gain VCE= −10 V; IC= −2mA
hFE groupR 210 - 340
hFE groupS 290 - 460
VCEsat collector-emitter
saturation voltage= −100 mA;= −10 mA
[1] -- −500 mV
NXP Semiconductors 2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Package outline transition frequency VCE= −10 V; IC=−1 mA;= 100 MHz
hFE groupR 70 - - MHz
hFE groupS 80 - - MHz collector capacitance VCB= −10V;IE =ie =0A;
f=1MHz
--5 pF
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors 2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
10. Packing information[1] For further information and the availability of packing methods, see Section14.
[2] /DG: halogen-free
11. Soldering
Table 9. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
2PB709ARL SOT23 4 mm pitch, 8 mm tape and reel -215 -235
2PB709ASL
2PB709ARL/DG
2PB709ASL/DG
NXP Semiconductors 2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
