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2PB709ART
45 V, 100 mA PNP general-purpose transistor
Product profile1.1 General descriptionPNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
NPN complement: 2PD601ART.
1.2 Features General-purpose transistor Small SMD plastic package
1.3 Applications General-purpose switching and amplification
1.4 Quick reference data Pinning information
2PB709ART
45 V, 100 mA PNP general-purpose transistor
Rev. 01 — 19 March 2007 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - −45 V collector current - - −100 mA
hFE DC current gain VCE= −10V;= −2mA
210 - 340
Table 2. Pinning base emitter collector
sym013
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 3. Ordering information2PB709ART - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes2PB709ART C5*
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −45 V
VCEO collector-emitter voltage open base - −45 V
VEBO emitter-base voltage open collector - −6V collector current - −100 mA
ICM peak collector current single pulse;≤ 1ms −200 mA
IBM peak base current single pulse;≤ 1ms −100 mA
Ptot total power dissipation Tamb≤25°C [1]- 250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 500 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 140 K/W
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-basecut-off
current
VCB= −45 V; IE =0A - - −10 nA
VCB= −45V;IE =0A;= 150°C −5 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −10 nA
hFE DC current gain VCE= −10V;= −2mA
210 - 340
VCEsat collector-emitter
saturation voltage= −100 mA;= −10 mA
[1] -- −500 mV transition frequency VCE= −10V;=−1 mA;= 100 MHz - - MHz collector capacitance VCB= −10V; =ie =0A;
f=1MHz
--5 pF
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor
NXP Semiconductors 2PB709ART
45 V, 100 mA PNP general-purpose transistor Package outline Packing information[1] For further information and the availability of packing methods, see Section13.
Table 8. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
2PB709ART SOT23 4 mm pitch, 8 mm tape and reel -215 -235
