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2N7002-N72 N/a 3000



2N7002P ,60 V, 360 mA N-channel Trench MOSFETApplications„ High-speed line driver„ Relay driver„ Low-side loadswitch„ Switching circuits1.4 Quic ..
2N7002PT ,60 V, 310 mA N-channel Trench MOSFETApplications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quic ..
2N7002PW ,60 V, 310 mA N-channel Trench MOSFETApplications„ High-speed line driver„ Relay driver„ Low-side loadswitch„ Switching circuits1.4 Quic ..
2N7002S , SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere
2N7002S , SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere
2SC3326 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching ApplicationsApplications Unit: mm  High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC3328 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC3328TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)POWER AMPLIFIER
2SC3328 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS I 5.1 MAX. ILow Saturation Voltage: VCE (sat)=0-5V (Max.) (1021A)- - v0.75MAX.0 High S ..
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