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JANTX2N6788IRN/a113avai100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
IRFF120IORN/a205avaiN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A.
2N6788ON/STN/a1000avaiN-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.


2N6788 ,N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.PD - 90426CIRFF120REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6788HEXFET TRANSISTORS JANTXV2N678 ..
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2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)


2N6788-IRFF120-JANTX2N6788
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.
International
IEZR Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF120 100V 0.309 6.0A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 90426C
IRFF120
J ANTX2N6788
JANTXV2N6788
REF:MIL-PRF-19500/555
100V, N-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 6.0
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 3.5 A
IDM Pulsed Drain Current C) 24
PD @ TC = 25°C Max. Power Dissipation 20 W
Linear Derating Factor 0.16 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 76 m1
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF120 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.10 - VPC Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.30 VGS = 10V, ID = 3.5A ©
Resistance - - 0.345 n VGS =10V, ID = 6.0A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, 1D = 250PA
gfs Forward Transconductance 1.5 - - S (U) VDS > 15V, IDS = 3.5A co
IDSS Zero Gate Voltage Drain Current - - 25 VDS= 80V, VGs=0V
- - 250 WA VDS = 80V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge 7.7 - 17 VGS =10V, ID = 6.0A
Qgs Gate-to-Source Charge 0.7 - 4.0 nC VDS= 50V
Qgd Gate-to-Drain (Niller') Charge 2.0 - 7.7
td(0n) Turn-On Delay Time - - 40 VDD = 50V, ID = 6.0A,
tr Rise Time - - 70 RG = 7.59
td(oft) Turn-Off Delay Time - - 40 ns
tf Fall Time - - 70
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.251n. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 350 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 150 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 24 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 6.0 A
ISM Pulse Source Current (Body Diode) (I) - - 24
VSD Diode Forward Voltage - - 1.8 V Ti = 25°C, Is =6.0A, VGS = 0V ©
trr Reverse Recovery Time - - 240 nS Tj = 25°C, IF = 6.0A, di/dt S 100A/us
QRR Reverse Recovery Charge - - 2.0 11C VDD S 50V ©
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 6.25 'C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

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