| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6504G |
ON|ON Semiconductor |
N/a |
49 |
 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS |
2N6506 NJS,Conductor Products, Inc. - THYRISTORS SILICON CONTROLLED RECTIFIERS
2N6506 MOT,Conductor Products, Inc. - THYRISTORS SILICON CONTROLLED RECTIFIERS
2N6504G , Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
2N6507 ,Silicon Controlled Rectifiers22N6504 SeriesVoltage Current Characteristic of SCR+ CurrentAnode +VSymbol ParameterTMV Peak Repeti ..
2N6508 ,Silicon Controlled Rectifiersfeatures include:gate drive signal. A center–gate–fire SCR has more di/dtcapability than a corner–g ..
2N6508 ,Silicon Controlled RectifiersFeatures• Glass Passivated Junctions with Center Gate Fire for GreaterSCRsParameter Uniformity and ..
2N6509 ,Silicon Controlled RectifiersMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit*Peak Repetitive Off−Stat ..
2SC3073 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)FEATURES:. Good Linearity of hFE' Complementary to 2SA1243MAXIMUM RATINGS (ia--25oc)CHARACTERISTICC ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = 0.4 V (max) (I = 3 A) CE (sat) C ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switch ..
