| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N643 |
|
N/a |
34 |
 |
|
2N6486 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6486 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6486 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6486 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6488 ,NPN/PNP PLASTIC POWER TRANSISTORSTHERMAL CHARACTERISTICSÎÎÎÎÎCharacteristic Symbol Max UnitÎÎÎThermal Resistance, Junction to Case R ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
