| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2N6395E |
ST|ST Microelectronics |
N/a |
1076 |
 |
|
2N6397 ,12A silicon controlled rectifier. Vrsom 450V.ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
2N6397 ,12A silicon controlled rectifier. Vrsom 450V.**Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6394/D** ** ** *Reverse Blocking Triode Thyri ..
2N6399 ,SCRs 12 AMPERES RMS 50 thru 800 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
2N6402 ,16A silicon controlled rectifier. Vrsom 250V.3T , MAXIMUM CASE TEMPERATURE ( C) °CP , AVERAGE POWER (WATTS)(AV)2N6400 Series200100705030 ..
2N6403 ,16A silicon controlled rectifier. Vrsom 450V.ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
