2N6287 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
2N6292 ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitÎÎÎThermal Resistance, Junction to Case R 3.12 ..
2N6295 ,Conductor Products, Inc. - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6297 ,Conductor Products, Inc. - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6299 ,Conductor Products, Inc. - COMPLEMENTARY SILICON POWER TRANSISTORS
2N6306 ,Conductor Products, Inc. - HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6287
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
